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STGP19NC60W

STGP19NC60W

STGP19NC60W

STMicroelectronics

STGP19NC60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP19NC60W Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Series PowerMESH™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation130W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP19
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Power - Max 130W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Turn On Time33 ns
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Turn Off Time-Nom (toff) 204 ns
Gate Charge53nC
Td (on/off) @ 25°C 25ns/90ns
Switching Energy 81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
RoHS StatusROHS3 Compliant
In-Stock:1845 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.53000$4.53
10$4.06800$40.68
100$3.33330$333.33

STGP19NC60W Product Details

STGP19NC60W Description


This IGBT utilizes the advanced PowerMESH?process resulting in an excellent trade-offbetween switching performance and low on-statebehavior.



STGP19NC60W Features


■ High frequency operation

■ Low CRES / CIES ratio (no cross-conduction

susceptibility)

STGP19NC60W Applications


■ High frequency motor controls, inverters, UPS

■ HF, SMPS and PFC in both hard switch and

resonant topologies


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