STGF10NC60SD

Name: STGF10NC60SD
Brand: STMicroelectronics
SKU: STGF10NC60SD
Availability: InStock

new-10%

Manufacturer part number:STGF10NC60SD

Manufacturer:STMicroelectronics

Description:STGF10NC60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGF10NC60SD Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	25W
Base Part Number	STGF10
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	25W
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	19 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	160 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	10A
Reverse Recovery Time	22 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.45V
Turn On Time	22.5 ns
Test Condition	390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.65V @ 15V, 5A
Turn Off Time-Nom (toff)	560 ns
Gate Charge	18nC
Current - Collector Pulsed (Icm)	25A
Td (on/off) @ 25°C	19ns/160ns
Switching Energy	60μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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