IRGS6B60KTRLPBF Description
IRGS6B60KTRLPBF is a 600V insulated gate bipolar transistor. The Infineon IRGS6B60KTRLPBF can be applied in Automotive, Advanced driver assistance systems (ADAS), Communications equipment, Wired networking, Enterprise systems, and Datacenter & enterprise computing. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGS6B60KTRLPBF is in the TO-220AB package with 90W power dissipation.
IRGS6B60KTRLPBF Features
Low VCE (on) Non-Punch Through IGBT Technology
10μs Short Circuit Capability
Square RBSOA
Positive VCE (on) Temperature Coefficient
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
IRGS6B60KTRLPBF Applications
Automotive
Advanced driver assistance systems (ADAS)
Communications equipment
Wired networking
Enterprise systems
Datacenter & enterprise computing
