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IRG4BC20S

IRG4BC20S

IRG4BC20S

Infineon Technologies

IRG4BC20S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 19A
Turn On Time38 ns
Test Condition 480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Turn Off Time-Nom (toff) 1540 ns
Gate Charge27nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 27ns/540ns
Switching Energy 120μJ (on), 2.05mJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:2987 items

Pricing & Ordering

QuantityUnit PriceExt. Price
300$1.96350$589.05

IRG4BC20S Product Details

IRG4BC20S Description


IRG4BC20S devices are INSULATED GATE BIPOLAR TRANSISTOR



IRG4BC20S Features


?Standard: designed for low operating frequencies ( 1kHz) and minimal saturation voltage.


?Compared to Generation 3, the Generation 4 IGBT design has a narrower parameter distribution and improved efficiency.


?TO-220AB package is an industry standard.



IRG4BC20S Applications


Switching applications


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