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IXER35N120D1

IXER35N120D1

IXER35N120D1

IXYS

IXYS SEMICONDUCTOR IXER35N120D1 IGBT Single Transistor, 50 A, 2.2 V, 200 W, 1.2 kV, ISOPLUS-247, 3 Pins

SOT-23

IXER35N120D1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 247
Weight 5.3g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2004
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating50A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation200W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time85 ns
Transistor Application POWER CONTROL
Rise Time50ns
Turn-Off Delay Time 440 ns
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 50A
Reverse Recovery Time 80 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.2V
Turn On Time135 ns
Test Condition 600V, 35A, 39 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 35A
Turn Off Time-Nom (toff) 490 ns
IGBT Type NPT
Gate Charge150nC
Switching Energy 5.4mJ (on), 2.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3126 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.017964$2.017964
10$1.903739$19.03739
100$1.795981$179.5981
500$1.694321$847.1605
1000$1.598416$1598.416

About IXER35N120D1

The IXER35N120D1 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IXYS SEMICONDUCTOR IXER35N120D1 IGBT Single Transistor, 50 A, 2.2 V, 200 W, 1.2 kV, ISOPLUS-247, 3 Pins.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXER35N120D1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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