IKB40N65EF5ATMA1 Description
IKB40N65EF5ATMA1 is a type of TRENCHSTOPTM 5 high-speed switching IGBT co-packed with fully rated current RAPID 1 anti-parallel diode. It is designed based on a high-speed switching series 5th generation to provide best-in-class efficiency in hard switching and resonant topologies, 650V breakdown voltage, and low QG. Based on its specific characteristics, IKB40N65EF5ATMA1 IGBT is well suited for a wide range of applications, including energy generation, industrial power supplies, metal treatment, and infrastructure–charge.
IKB40N65EF5ATMA1 Features
Maximumjunctiontemperature175°C
650V breakdown voltage
LowQG
Full rated current RAPID 1 anti parallel diode
High speed H5 technology
IKB40N65EF5ATMA1 Applications
Energy generation
Industrial power supplies
Metal treatment
Infrastructure–charge
