STGD19N40LZ Description
This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between the gate collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
STGD19N40LZ Features
AEC-Q101 qualified
180 mJ of avalanche energy @ TC = 150 °C,L = 3 mH
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic-level gate drive
Low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
STGD19N40LZ Applications
Pencil coil electronic ignition driver
