AIKB50N65DH5ATMA1 Features and Benefits
High-speed H5 technology offering.g
Best-in-Class efficiency in hard switching and resonant
topologies
Plug and play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge Q:
IGBT co-packed with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175'C
Dynamically stress tested
Qualified according to AEC-Q101
Green package (RoHS compliant)
AIKB50N65DH5ATMA1 Applications
Off-board charger
On-board charger
DC/DCconverter
Power-Factor correction
