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STGB3NC120HDT4

STGB3NC120HDT4

STGB3NC120HDT4

STMicroelectronics

IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast

SOT-23

STGB3NC120HDT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 months ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2.000002g
Transistor Element Material SILICON
Manufacturer Package Identifier D2Pak
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureLOW CONDUCTION LOSS
Max Power Dissipation75W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation75W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time15 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 118 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 14A
Reverse Recovery Time 51 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.3V
Max Breakdown Voltage 1.2kV
Turn On Time18.5 ns
Test Condition 800V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 14A
Turn Off Time-Nom (toff) 680 ns
Gate Charge24nC
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 15ns/118ns
Switching Energy 236μJ (on), 290μJ (off)
Height 4.83mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3430 items

Pricing & Ordering

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About STGB3NC120HDT4

The STGB3NC120HDT4 from STMicroelectronics is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the STGB3NC120HDT4, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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