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IRGP4062D-EPBF

IRGP4062D-EPBF

IRGP4062D-EPBF

Infineon Technologies

IRGP4062D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4062D-EPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation250W
Element ConfigurationSingle
Input Type Standard
Power - Max 250W
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 48A
Reverse Recovery Time 89 ns
Collector Emitter Breakdown Voltage600V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
IGBT Type Trench
Gate Charge75nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:3366 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.622172$3.622172
10$3.417144$34.17144
100$3.223720$322.372
500$3.041246$1520.623
1000$2.869100$2869.1

IRGP4062D-EPBF Product Details

IRGP4062D-EPBF Features

Low VCE (ON) Trench IGBT Technology

Low switching losses

Maximum Junction temperature 175 °C

5 μS short circuit SOA

Square RBSOA

100% of the parts tested for ILM

Positive VCE (ON) Temperature coefficient

ultrafast soft Recovery Co-Pak Diode

Tight parameter distribution

Lead-Free Package



IRGP4062D-EPBF Benefits

High Efficiency in a wide range of applications

Suitable for a wide range of switching frequencies due to

Low VCE (ON) and Low Switching losses

Rugged transient Performance for increased reliability

Excellent Current sharing in parallel operation

Low EMI


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