STGD18N40LZT4 IGBT Description
The sophisticated PowerMESHTM technology is used in this STGD18N40LZT4IGBT, resulting in a superb trade-off between switching performance and low on-state behavior. Overvoltage protection is provided by the built-in Zener diodes between the gate-collector and gate-emitter. The device also has a low on-state voltage drop and a low threshold drive, making it suitable for application in vehicle ignition systems. Furthermore, the ESD-protected logic level gate input and integrated gate resistor eliminate the need for external protective circuitry.
STGD18N40LZT4 IGBT Features
AEC Q101 compliant
180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
STGD18N40LZT4 IGBT Applications
General Motor Driver
PTC Heater
Oil Pump
HVAC Systems
Switching Device
Pencil coil electronic ignition driver
