STGB30H60DLLFBAG Description
The deviceSTGB30H60DLLFBAG is a kind of IGBT developed using advanced proprietary trench gate field stop structure. The device is part of the new HB series IGBT and represents the best tradeoff between turn-on and switching loss to maximize the efficiency of any frequency converter. In addition, the micro-positive VCE (Sat) temperature coefficient and very tight parameter distribution make parallel operation safer.
STGB30H60DLLFBAG Features
· AEC-Q101 qualified
· Maximum junction temperature: TJ = 175 °C
· Logic level gate drive
· High speed switching series
· Minimized tail current
· VCE(sat) = 1.7 V (typ.) @ IC = 30 A
· Low VF soft recovery co-packaged diode
· Tight parameters distribution
· Safer paralleling
· Low thermal resistance
STGB30H60DLLFBAG Applications
· Ignition
