NGTG30N60FLWG Description
NGTG30N60FLWG belongs to the family of Insulated Gate Bipolar Transistors (IGBTs) provided by ON Semiconductor. It is designed based on a robust and cost-effective Trench construction and is optimized for high-speed switching. It is able to provide low saturation voltage utilizing a Trench with Field Stop Technology. In addition, System power dissipation can be reduced on the basis of its low switching loss. NGTG30N60FLWG IGBT provides superior performance in demanding switching applications.
NGTG30N60FLWG Features
A robust and cost-effective Trench construction
High-speed switching
Low saturation voltage
Trench with Field Stop Technology
Package: TO?247
NGTG30N60FLWG Applications
Power factor correction
Solar inverters
Uninterruptable power supply (UPS)
