STGW40H60DLFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW40H60DLFB Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
283W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW40
Element Configuration
Single
Input Type
Standard
Power - Max
283W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.6V
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
210nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
-/142ns
Switching Energy
363μJ (off)
Gate-Emitter Voltage-Max
20V
Height
20.15mm
Length
15.75mm
Width
5.15mm
RoHS Status
ROHS3 Compliant
In-Stock:1689 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.31000
$4.31
30
$3.70133
$111.0399
120
$3.24442
$389.3304
510
$2.80286
$1429.4586
STGW40H60DLFB Product Details
STGW40H60DLFB Description
STGW40H60DLFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. STGW40H60DLFB Features
Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameters distribution Safe paralleling Low thermal resistance Low VF soft recovery co-packaged diode Lead free package STGW40H60DLFB Applications
Induction heating Microwave oven Resonant converters New energy vehicles, photovoltaic & wind power generation smart grid
Related Products
Similar Transistors - IGBTs - Single from STMicroelectronics and other manufacturers
