NGTB45N60S2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB45N60S2WG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mount
Through Hole
Package / Case
TO-247
Number of Pins
3
Packaging
Tube
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Element Configuration
Single
Collector Emitter Voltage (VCEO)
2.3V
Max Collector Current
90A
Reverse Recovery Time
498 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Height
21.4mm
Length
16.25mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2151 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.900368
$1.900368
10
$1.792800
$17.928
100
$1.691321
$169.1321
500
$1.595586
$797.793
1000
$1.505269
$1505.269
NGTB45N60S2WG Product Details
NGTB45N60S2WG Description
The NGTB45N60S2WG IGBT features a robust and cost-effective Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.
NGTB45N60S2WG Features
Low Switching Loss Reduces System Power Dissipation
TJmax = 175°C
Soft, Fast Free Wheeling Diode
This is a Pb?Free Device
NGTB45N60S2WG Applications
Welding
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