IRF640FP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
IRF640FP Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MESH OVERLAY™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
18A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IRF6
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
40W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
40W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1560pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
25 ns
Continuous Drain Current (ID)
18A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
72A
Avalanche Energy Rating (Eas)
280 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3601 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IRF640FP Product Details
IRF640FP Description
IRF640FP is a 200v N-channel Mesh overlay? Power MOSFET. This power MOSFET IRF640FP is designed using the company?ˉs consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. The operating and storage temperature is between -65 and +150??. The Infineon IRF640FP is in the TO-220FP-3 package with 40w.
IRF640FP Features
Extremely high dv/dt capability
Very low intrinsic capacitances
Gate charge minimized
Drain-source voltage (VGS = 0): 200v
Gate-source voltage: ?à20v
IRF640FP Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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