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IRLR3105PBF

IRLR3105PBF

IRLR3105PBF

Infineon Technologies

IRLR3105PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR3105PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2008
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 37mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating25A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 57W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation57W
Case Connection DRAIN
Turn On Delay Time8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time57ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 3V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Nominal Vgs 3 V
Height 2.39mm
Length 6.73mm
Width 6.223mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1682 items

IRLR3105PBF Product Details

IRLR3105PBF Description

The IRLR3105PBF MOSFET makes use of tried-and-true silicon manufacturing techniques to provide designers with a wide range of devices to serve numerous applications, including battery-powered devices, DC motors, inverters, SMPS, lighting, load switches, and illumination. For ease of design, IRLR3105PBF is offered in a range of surface mount and through-hole packages with standardized industry footprints.


IRLR3105PBF Features

  • Lead-Free

  • Fast Switching

  • Logic-Level Gate Drive

  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • 175°C Operating Temperature

  • Repetitive Avalanche Allowed up to Tjmax


IRLR3105PBF Applications

  • Switching high-power devices

  • Control speed of motors

  • LED dimmers or flashers

  • High-speed switching applications

  • Converters or inverter circuits

  • Microcontroller logic switching


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