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TK18E10K3,S1X(S

TK18E10K3,S1X(S

TK18E10K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 18A TO-220AB

SOT-23

TK18E10K3,S1X(S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Published 2009
Series U-MOSIV
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation71W
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 42mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 18A
Rds On Max 42 mΩ
RoHS StatusRoHS Compliant
In-Stock:4191 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.323897$11.323897
10$10.682922$106.82922
100$10.078228$1007.8228
500$9.507763$4753.8815
1000$8.969587$8969.587

About TK18E10K3,S1X(S

The TK18E10K3,S1X(S from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 18A TO-220AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TK18E10K3,S1X(S, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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