IRF7492PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7492PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Power Dissipation
2.5W
Turn On Delay Time
15 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
79mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1820pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.7A Ta
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
3.7A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Dual Supply Voltage
200V
Input Capacitance
1.82nF
Recovery Time
100 ns
Drain to Source Resistance
79mOhm
Rds On Max
79 mΩ
Nominal Vgs
2.5 V
Height
1.4986mm
Length
4.9784mm
Width
4.05mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2087 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.853851
$0.853851
10
$0.805520
$8.0552
100
$0.759925
$75.9925
500
$0.716910
$358.455
1000
$0.676330
$676.33
IRF7492PBF Product Details
IRF7492PBF Description
IRF7492PBF is a 200v HEXFET? Power MOSFET. The Infineon IRF7492PBF can be applied for High-frequency DC-DC converters due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRF7492PBF is in the SOIC-8 package with 2.5W power dissipation.
IRF7492PBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design
Fully Characterized Avalanche Voltage and Current
Application for High frequency DC-DC converters
Lead-Free
IRF7492PBF Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
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