Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD682

BD682

BD682

STMicroelectronics

BD682 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BD682 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation40W
Current Rating-4A
Base Part Number BD682
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation40W
Case Connection ISOLATED
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage100V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage2.5V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Continuous Collector Current 4A
Height 10.8mm
Length 7.8mm
Width 2.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9250 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.058400$0.0584
500$0.042941$21.4705
1000$0.035784$35.784
2000$0.032830$65.66
5000$0.030682$153.41
10000$0.028541$285.41
15000$0.027603$414.045
50000$0.027141$1357.05

BD682 Product Details

BD682 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.10MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.The maximum collector current is 4A volts.

BD682 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz

BD682 Applications


There are a lot of STMicroelectronics BD682 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News