NSS1C201MZ4T3G Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 200mA, 2A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.100MHz is present in the transition frequency.A maximum collector current of 2A volts is possible.
NSS1C201MZ4T3G Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS1C201MZ4T3G Applications
There are a lot of ON Semiconductor NSS1C201MZ4T3G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
