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GPA030A135MN-FDR

GPA030A135MN-FDR

GPA030A135MN-FDR

SemiQ

IGBT 1350V 60A 329W TO3PN

SOT-23

GPA030A135MN-FDR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3
Supplier Device Package TO-3PN
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 329W
Reverse Recovery Time 450ns
Voltage - Collector Emitter Breakdown (Max) 1350V
Current - Collector (Ic) (Max) 60A
Test Condition 600V, 30A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge300nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 30ns/145ns
Switching Energy 4.4mJ (on), 1.18mJ (off)
RoHS StatusROHS3 Compliant
In-Stock:2656 items

Pricing & Ordering

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About GPA030A135MN-FDR

The GPA030A135MN-FDR from SemiQ is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 1350V 60A 329W TO3PN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GPA030A135MN-FDR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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