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MMSTA06T146

MMSTA06T146

MMSTA06T146

ROHM Semiconductor

MMSTA06T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMSTA06T146 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number STA06
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
VCEsat-Max 0.25 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:20281 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.186994$0.186994
10$0.176409$1.76409
100$0.166424$16.6424
500$0.157003$78.5015
1000$0.148117$148.117

MMSTA06T146 Product Details

MMSTA06T146 Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 100MHz in the part.As a result, it can handle voltages as low as 80V volts.During maximum operation, collector current can be as low as 500mA volts.

MMSTA06T146 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

MMSTA06T146 Applications


There are a lot of ROHM Semiconductor MMSTA06T146 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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