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BCV26,235

BCV26,235

BCV26,235

Nexperia USA Inc.

BCV26,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCV26,235 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation250mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BCV26
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power - Max 250mW
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 220MHz
Collector Emitter Saturation Voltage1V
Frequency - Transition 220MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:120496 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.05000$0.05
500$0.0495$24.75
1000$0.049$49
1500$0.0485$72.75
2000$0.048$96
2500$0.0475$118.75

BCV26,235 Product Details

BCV26,235 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Parts of this part have transition frequencies of 220MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BCV26,235 Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz

BCV26,235 Applications


There are a lot of Nexperia USA Inc. BCV26,235 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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