BCP56-16T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Parts of this part have transition frequencies of 130MHz.Breakdown input voltage is 80V volts.Maximum collector currents can be below 1A volts.
BCP56-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
BCP56-16T1G Applications
There are a lot of ON Semiconductor BCP56-16T1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
