PBSS9110Y,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.100MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.Maximum collector currents can be below 1A volts.
PBSS9110Y,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110Y,115 Applications
There are a lot of Nexperia USA Inc. PBSS9110Y,115 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
