MMST3906T146 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -400mV, giving you a wide variety of design options.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-20mA).A transition frequency of 250MHz is present in the part.The breakdown input voltage is 40V volts.Collector current can be as low as 200mA volts at its maximum.
MMST3906T146 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -20mA
a transition frequency of 250MHz
MMST3906T146 Applications
There are a lot of ROHM Semiconductor MMST3906T146 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
