2SD1898T100Q Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD1898T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1898T100Q Applications
There are a lot of ROHM Semiconductor 2SD1898T100Q applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
