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MJ4502G

MJ4502G

MJ4502G

ON Semiconductor

MJ4502G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJ4502G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation200W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating30A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 90V
Max Collector Current 30A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 7.5A 2V
Current - Collector Cutoff (Max) 1mA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 750mA, 7.5A
Collector Emitter Breakdown Voltage100V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage800mV
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 4V
hFE Min 25
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1023 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.84000$6.84
10$6.17900$61.79
100$5.11530$511.53
500$4.45430$2227.15

MJ4502G Product Details

MJ4502G Overview


This device has a DC current gain of 25 @ 7.5A 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 800mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 4V to gain high efficiency.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 2MHz.In extreme cases, the collector current can be as low as 30A volts.

MJ4502G Features


the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz

MJ4502G Applications


There are a lot of ON Semiconductor MJ4502G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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