NJW44H11G Overview
This device has a DC current gain of 80 @ 4A 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at 10A.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
NJW44H11G Features
the DC current gain for this device is 80 @ 4A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
NJW44H11G Applications
There are a lot of ON Semiconductor NJW44H11G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
