2SD1782KT146R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 100mA 3V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.A constant collector voltage of 500mA is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.120MHz is present in the transition frequency.A breakdown input voltage of 80V volts can be used.When collector current reaches its maximum, it can reach 500mA volts.
2SD1782KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 120MHz
2SD1782KT146R Applications
There are a lot of ROHM Semiconductor 2SD1782KT146R applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
