BCP5316H6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 125MHz.Device displays Collector Emitter Breakdown (80V maximal voltage).
BCP5316H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz
BCP5316H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP5316H6327XTSA1 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
