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BC846A RFG

BC846A RFG

BC846A RFG

Taiwan Semiconductor Corporation

BC846A RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC846A RFG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:245906 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.152059$0.152059
10$0.143452$1.43452
100$0.135331$13.5331
500$0.127672$63.836
1000$0.120445$120.445

BC846A RFG Product Details

BC846A RFG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 100mA.Single BJT transistor comes in a supplier device package of SOT-23.The device exhibits a collector-emitter breakdown at 65V.

BC846A RFG Features


the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 500mV @ 5mA, 100mA
the supplier device package of SOT-23

BC846A RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC846A RFG applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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