NZT44H8 Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.50MHz is present in the transition frequency.As a result, it can handle voltages as low as 60V volts.During maximum operation, collector current can be as low as 8A volts.
NZT44H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
NZT44H8 Applications
There are a lot of ON Semiconductor NZT44H8 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
