DZT5551-13 Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 115mV.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Parts of this part have transition frequencies of 100MHz.This device can take an input voltage of 160V volts before it breaks down.Maximum collector currents can be below 600mA volts.
DZT5551-13 Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
DZT5551-13 Applications
There are a lot of Diodes Incorporated DZT5551-13 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
