BC847BHZGT116 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).The part has a transition frequency of 200MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC847BHZGT116 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 200MHz
BC847BHZGT116 Applications
There are a lot of ROHM Semiconductor BC847BHZGT116 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
