2SC5868TLQ Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 75mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts can be achieved.
2SC5868TLQ Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 75mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5868TLQ Applications
There are a lot of ROHM Semiconductor 2SC5868TLQ applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
