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MMST4403T146

MMST4403T146

MMST4403T146

ROHM Semiconductor

MMST4403T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMST4403T146 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 59
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-600mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number T4403
Pin Count3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element ConfigurationSingle
Power - Max 200mW
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 750mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -6V
hFE Min 20
VCEsat-Max 0.6 V
Turn Off Time-Max (toff) 255ns
Turn On Time-Max (ton) 35ns
Collector-Base Capacitance-Max 7pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16273 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.686795$0.686795
10$0.647920$6.4792
100$0.611245$61.1245
500$0.576646$288.323
1000$0.544006$544.006

MMST4403T146 Product Details

MMST4403T146 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.The base voltage of the emitter can be kept at -6V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.A maximum collector current of 600mA volts can be achieved.

MMST4403T146 Features


the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMST4403T146 Applications


There are a lot of ROHM Semiconductor MMST4403T146 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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