2SAR586D3TL1 Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SAR586D3TL1 Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 320mV @ 100mA, 2A
2SAR586D3TL1 Applications
There are a lot of ROHM Semiconductor 2SAR586D3TL1 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
