DJT4030P-13 Overview
In this device, the DC current gain is 200 @ 1A 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 300mA, 3A.Continuous collector voltage should be kept at -3A for high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A transition frequency of 150MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 40V volts.Collector current can be as low as 3A volts at its maximum.
DJT4030P-13 Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
DJT4030P-13 Applications
There are a lot of Diodes Incorporated DJT4030P-13 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
