NSV12100XV6T1G Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 440mV @ 100mA, 1A.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
NSV12100XV6T1G Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A
NSV12100XV6T1G Applications
There are a lot of ON Semiconductor NSV12100XV6T1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
