MSC2712GT1G Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 50V volts.A maximum collector current of 100mA volts can be achieved.
MSC2712GT1G Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
MSC2712GT1G Applications
There are a lot of ON Semiconductor MSC2712GT1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
