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2N5771

2N5771

2N5771

Rochester Electronics, LLC

2N5771 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N5771 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 350mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 300mV
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 200mA
RoHS StatusROHS3 Compliant
In-Stock:2614 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.00000$3
500$2.97$1485
1000$2.94$2940
1500$2.91$4365
2000$2.88$5760
2500$2.85$7125

2N5771 Product Details

2N5771 Overview


This device has a DC current gain of 50 @ 10mA 300mV, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.

2N5771 Features


the DC current gain for this device is 50 @ 10mA 300mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-92-3

2N5771 Applications


There are a lot of Rochester Electronics, LLC 2N5771 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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