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2N4953

2N4953

2N4953

Rochester Electronics, LLC

2N4953 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N4953 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Turn Off Time-Max (toff) 400ns
Turn On Time-Max (ton) 40ns
RoHS StatusROHS3 Compliant
In-Stock:1170 items

2N4953 Product Details

2N4953 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 150mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 15mA, 150mA.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

2N4953 Features


the DC current gain for this device is 200 @ 150mA 10V
the vce saturation(Max) is 300mV @ 15mA, 150mA

2N4953 Applications


There are a lot of Rochester Electronics, LLC 2N4953 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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