MJD112-001 Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 2A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 25MHz in the part.Collector current can be as low as 2A volts at its maximum.
MJD112-001 Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD112-001 Applications
There are a lot of ON Semiconductor MJD112-001 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
