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JANTXV2N3737

JANTXV2N3737

JANTXV2N3737

Microsemi Corporation

JANTXV2N3737 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3737 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AB, TO-46-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Series Military, MIL-PRF-19500/395
JESD-609 Code e0
Pbfree Code no
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Max Power Dissipation500mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage40V
Collector Base Voltage (VCBO) 75V
Turn Off Time-Max (toff) 60ns
Turn On Time-Max (ton) 48ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1935 items

JANTXV2N3737 Product Details

JANTXV2N3737 Overview


In this device, the DC current gain is 20 @ 1A 1.5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A maximum collector current of 1.5A volts can be achieved.

JANTXV2N3737 Features


the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A

JANTXV2N3737 Applications


There are a lot of Microsemi Corporation JANTXV2N3737 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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