2SB1308T100R Overview
This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -450mV, which allows for maximum design flexibility.When VCE saturation is 450mV @ 150mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -3A in order to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A breakdown input voltage of 20V volts can be used.Collector current can be as low as 3A volts at its maximum.
2SB1308T100R Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -450mV
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
2SB1308T100R Applications
There are a lot of ROHM Semiconductor 2SB1308T100R applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
