2N4401TA Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 750mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 250MHz.Input voltage breakdown is available at 40V volts.Collector current can be as low as 600mA volts at its maximum.
2N4401TA Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401TA Applications
There are a lot of ON Semiconductor 2N4401TA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
