2SA2013-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 340mV @ 100mA, 2A.An emitter's base voltage can be kept at -6V to gain high efficiency.Parts of this part have transition frequencies of 360MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 4A volts.
2SA2013-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 340mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 360MHz
2SA2013-TD-E Applications
There are a lot of ON Semiconductor 2SA2013-TD-E applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
