MMBTA56WT1G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 4V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Parts of this part have transition frequencies of 50MHz.The breakdown input voltage is 80V volts.A maximum collector current of 500mA volts can be achieved.
MMBTA56WT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA56WT1G Applications
There are a lot of ON Semiconductor MMBTA56WT1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
